收藏本站
Preliminary Datasheet
RJK03E2DNS
Silicon N Channel Power MOS FET
Power Switching
Features
R07DS0658EJ0300
(Previous: REJ03G1904-0200)
Rev.3.00
Feb 01, 2012
?
?
?
?
?
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R DS(on) = 6.9 m ? typ. (at V GS = 10 V)
? Pb-free
? Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4
1, 2, 3 Source
4 3 2 1
G
4 Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
V DSS
V GSS
I D
I D(pulse)Note1
I DR
I AP Note 2
E AR Note 2
Pch Note3
? ch-c Note3
Tch
Tstg
Ratings
30
±20
16
64
16
8
6.4
12.5
10.0
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
? C/W
? C
? C
Notes: 1. PW ? 10 ? s, duty cycle ? 1%
2. Value at Tch = 25 ? C, Rg ? 50 ?
3. Tc = 25 ? C
R07DS0658EJ0300 Rev.3.00
Feb 01, 2012
Page 1 of 6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
RJK6025DPD-00#J2 MOSFET N CH 600V 1A MP3A
RJP020N06T100 MOSFET N-CH 60V 2A SOT-89
RL3004-6.56-59-D1 THERMISTOR NTC 10 OHM @ 25C
RL4504-3.28-59-D1 THERMISTOR NTC 5 OHM @ 25C
RMW130N03TB MOSF N CH 30V 13A PSOP8
RMW150N03TB MOSF N CH 30V 15A PSOP8
RMW180N03TB MOSF N CH 30V 18A PSOP8
RMW200N03TB MOSF N CH 30V 20A PSOP8
相关代理商/技术参数
RJK03E2DNS-00-J5 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
RJK03E3DNS 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
RJK03E3DNS-00-J5 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
RJK03E3DNS-WS#J5 制造商:Renesas Electronics Corporation 功能描述:
RJK03E4DPA 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
RJK03E4DPA_13 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Built in SBD N Channel Power MOS FET High Speed Power Switching
RJK03E4DPA-00#J5A 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 30V 45A WPAK
RJK03E4DPA-00-J53 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching